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2SC5172 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5172 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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2SC5172 2006-11-10 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5172 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) at IC = 2 A • High collector breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 5 Collector current Pulse ICP 7 A Base current IB 2 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) |
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