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2SC5075 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SC5075
Description  Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5075 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC5075
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5075
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
• High-speed switching: tr = 1.0 μs (max), tf = 1.0 μs (max)
• High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
500
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)


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