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2SC5075 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5075 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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2SC5075 2006-11-10 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5075 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • High-speed switching: tr = 1.0 μs (max), tf = 1.0 μs (max) • High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) |
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