2SB1411 datasheet(2/5 Pages) TOSHIBA

Part #	2SB1411

Description	Silicon PNP Triple Diffused Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SB1411

2006-11-21

2

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −100 V, IE = 0

―

−100

μA

Emitter cut-off current

IEBO

VEB = −6 V, IC = 0

―

−2.5

mA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −30 mA, IB = 0

−100

―

V

hFE (1)

VCE = −3 V, IC = −1 A

1500

―

15000

DC current gain

hFE (2)

VCE = −3 V, IC = −2 A

1000

―

VCE (sat) (1) IC = −1 A, IB = −2 mA

―

−1.5

Collector-emitter saturation voltage

VCE (sat) (2) IC = −2 A, IB = −8 mA

―

−2.5

V

Base-emitter saturation voltage

VBE (sat)

IC = −1 A, IB = −2 mA

―

−2.2

V

Turn-on time

ton

―

1.0

―

Storage time

tstg

―

3.0

―

Switching time

Fall time

tf

−IB1 = IB2 = 2 mA, duty cycle ≤ 1%

―

2.0

―

μs

Marking

20 μs

VCC ≈ −30 V

Output

IB1

IB2

Input

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

B1411

Part No. (or abbreviation code)

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