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2SC3619 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. 2SC3619
Description  Silicon NPN Triple Diffused Type (PCT Process) High-Voltage Switching and Amplifier Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3619 Datasheet(HTML) 3 Page - Toshiba Semiconductor

  2SC3619_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC3619_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC3619_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC3619_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SC3619_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC3619
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector current IC (mA)
VCE (sat) – IC
VCE (sat) – IC
VBE (sat) – IC
Collector current IC (mA)
hFE – IC
Collector current IC (mA)
hFE – IC
30
Common emitter
IC/IB = 5
Ta = 25°C
5
0.3
3
0.5
0.3
0.1
1
3
10
100
1
Collector current IC (mA)
10
30
Common emitter
VCE = 10 V
500
0.3
300
50
30
10
1
3
10
100
VCE = 20 V
5
100
25
30
Common emitter
VCE = 10 V
500
0.3
300
50
30
10
1
3
10
100
Ta = 100°C
−25
100
Common emitter
Ta = 25°C
1
0.3
3
10
30
5
0.05
0.1
0.3
0.5
100
3
IC/IB = 10
5
2
1
Common emitter
IC/IB = 5
1
0.3
3
10
30
5
0.05
0.1
0.3
0.5
100
3
Ta = 100°C
−25
25
1
0.6
4
3
120
0
0
100
80
20
4
8
12
Common emitter
Ta = 25°C
2
IB = 0.2 mA
16
6
1
60
40
20
24
0.4


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