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2SC3619 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SC3619
Description  Silicon NPN Triple Diffused Type (PCT Process) High-Voltage Switching and Amplifier Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC3619 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SC3619
2006-11-09
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3619
High-Voltage Switching and Amplifier Applications
Color TV Horizontal Driver Applications
Color TV Chroma Output Applications
• High breakdown voltage: VCEO = 300 V
• Small collector output capacitance: Cob = 3.0 pF (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
100
mA
Base current
IB
50
mA
Collector power dissipation
(Ta = 25°C)
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)


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