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2SC3326 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SC3326
Description  Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC3326 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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2SC3326
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 25 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 2 V, IC = 4 mA
200
1200
Collector-emitter saturation voltage
VCE (sat)
IC = 30 mA, IB = 3 mA
0.042
0.1
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 mA
0.61
V
Transition frequency
fT
VCE = 6 V, IC = 4 mA
30
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4.8
7
pF
Turn-on time
ton
160
Storage time
tstg
500
Switching time
Fall time
tf
Duty cycle <= 2%
130
ns
Note: hFE classification A: 200~700, B: 350~1200


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