Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

2SC3325 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SC3325
Description  Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
Download  4 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo 

2SC3325 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
2SC3325
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
70
240
DC current gain
hFE (2)
(Note)
VCE = 6 V, IC = 400 mA
25
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 100 mA
0.8
1.0
V
Transition frequency
fT
VCE = 6 V, IC = 20 mA
300
MHz
Collector output capacitance
Cob
VCB = 6 V, IE = 0, f = 1 MHz
7
pF
Note: hFE (1) classification O: 70~140, Y: 120~240
hFE (2) classification O: 25 (min), Y: 40 (min)


Html Pages

1  2  3  4 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn