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2SC3324 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SC3324
Description  Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC3324 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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2SC3324
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
0.3
V
Transition frequency
fT
VCE = 6 V, IC = 1 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3
pF
NF (1)
VCB = 6 V, IC = 0.1 mA, f = 100 Hz,
Rg
= 10 kΩ
0.5
6
Noise figure
NF (2)
VCB = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg
= 10 kΩ
0.2
3
dB
Note: hFE classification GR (G): 200~400, BL (L): 350~700
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