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2SC3307 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. 2SC3307
Description  Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3307 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SC3307
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
VBE (sat) – IC
Collector current IC (A)
Switching Characteristics
500
1
0.003
300
100
30
10
0.03
0.1
0.3
1
10
0.01
Common emitter
VCE = 5 V
Tc = 100°C
25
−55
50
3
5
3
3
0.3
0.1
Tc = 100°C
25
−55
Common emitter
IC/IB = 5
0.02
0.05
0.5
0.003
0.03
0.1
0.3
1
10
0.01
3
1
Ta = 100°C
25
Common emitter
VCE = 5 V
−55
10
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1.4
1.0
1.2
0.1
10
Tc = 100°C
25
0.3
0.5
1
3
IC = 10IB1
IB1 = −IB2
Pulse width = 20 μs
Duty cycle ≤ 1%
100
5
0
4
8
2
6
10
25
tstg
tr
tf
30
12
8
6
4
2
4
6
8
10
2
0
0.6
0
1.0
IB = 0.1 A
1.2
0.2
0.4
1.4
1.6
0.8
Common emitter
Tc = 25°C
0
2
10
10
3
1
0.03
Tc = −55°C
25
100
Common emitter
IC/IB = 5
0.3
0.5
5
0.003
0.03
0.1
0.3
1
10
0.01
3
0.1
0.05


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