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2SC3075 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. 2SC3075
Description  Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3075 Datasheet(HTML) 3 Page - Toshiba Semiconductor

  2SC3075_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC3075_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC3075_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC3075_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SC3075_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC3075
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
VCE (sat) – IC
Collector current IC (mA)
VCE (sat) – IC
Collector current IC (mA)
VBE (sat) – IC
Collector current IC (mA)
VBE (sat) – IC
Collector current IC (mA)
hFE – IC
0
0
Common emitter
Tc = 25°C
1000
10
80
60
5
40
30
20
0
800
600
400
200
2
4
6
8
12
10
IB = 2 mA
Common emitter
IC/IB = 10
10
0.03
5
1
0.5
0.1
0.05
25
Tc = 100°C
−40
10
1
3
30
300
100
1000
3
0.3
25
Tc = −40°C
Common emitter
IC/IB = 10
100
10
1
3
5
0.1
0.3
0.5
1
3
10
30
300
1000
100
Common emitter
IC/IB = 5
10
0.03
5
1
0.5
0.1
0.05
25
Tc = 100°C
−40
10
1
3
30
300
100
1000
3
0.3
25
Tc = −40°C
Common emitter
IC/IB = 5
100
10
1
3
5
0.1
0.3
0.5
1
3
10
30
300
1000
100
10
300
1
1
Common emitter
VCE = 5 V
100
30
10
5
3
3
30
300
100
1000
50
25
Tc = 100°C
−40


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