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2SC2879A Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SC2879A
Description  SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC2879A Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SC2879A
2007-11-01
1
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2879A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 100WPEP
Power Gain
: Gp = 13dB
Collector Efficiency
: ηC = 35% (Min.)
Intermodulation Distortion: IMD = −24dB(Max.)
(MIL Standard)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCES
45
V
Collector-Emitter Voltage
VCEO
18
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
25
A
Collector Power Dissipation
PC
250
W
Junction Temperature
Tj
175
°C
Storage Temperature Range
Tstg
−65~175
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
MARKING
Dot
Lot No.
JEDEC
EIAJ
TOSHIBA
2–13B1A
Weight: 5.2g
Unit in mm
2SC2879
TOSHIBA
JAPAN


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