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QM30TX-HB Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. QM30TX-HB
Description  MEDIUM POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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QM30TX-HB Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE
VCE (V)
BASE REVERSE CURRENT
–IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (
°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM30TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
0
10
0
10
1
10
2
10
–1
10
–2
10
–3
10
2
10
1
10
0
10
–1
10
0
10
1
10
2
10
3
10
80
20
0
0
100
800
60
40
300 400 500
70
50
30
10
Tj=125°C
IB2=–3.0A
IB2=–0.6A
200
600 700
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4
0.8
1.2
1.6
2.0
2.4
Tj=25°C
Tj=125°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
–1
10
23 4 5 7
0
10
23 4 5 7
1
10
VCC=300V
Tj=25°C
Tj=125°C
IC=30A
IB1=60mA
ts
tf
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
TC=25°C
DC
1mS
100µS
500µS
7
5
3
2
7
5
3
2
7
5
3
2
0.5
0.4
0.3
0.1
0
23 45 7
0.2
7
5
3
24
100
90
60
40
20
0
0
160
20
40
60
80 100 120 140
80
10
70
50
30
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
NON-REPETITIVE


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