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S9195 Datasheet(PDF) 1 Page - Hamamatsu Corporation |
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S9195 Datasheet(HTML) 1 Page - Hamamatsu Corporation |
1 / 2 page Features l High sensitivity: 0.28 A/W Typ. (λ=405 nm) l High-speed response: 50 MHz Typ. (VR=10 V) l Active area: 5.0 × 5.0 mm l TO-8 metal package Applications l Violet-laser detection and monitor PHOTODIODE Si PIN photodiode Si PIN photodiode for violet-laser detection S9195 S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved despite the large active area. 1 s Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage VR Max. 20 V Operating temperature Topr -40 to +100 °C Storage temperature Tstg -55 to +125 °C s Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1000 - nm Peak sensitivity wavelength λp - 840 - nm Photo sensitivity S λ=405 nm 0.25 0.28 - A/W Dark current ID VR=10 V - 0.5 5 nA Terminal capacitance Ct VR=10 V, f=1 MHz - 60 80 pF Cut-off frequency fc VR=10 V, RL=50 Ω λ=405 nm, -3 dB 30 50 - MHz Noise equivalent power NEP VR=10 V, λ=λp 2.5 × 10 -14 -W/Hz 1/2 |
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