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S8650 Datasheet(PDF) 1 Page - Hamamatsu Corporation |
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S8650 Datasheet(HTML) 1 Page - Hamamatsu Corporation |
1 / 2 page S8650 S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 µm). When bonded to a scintillator, the flat surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between. We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us. Features l Flat epoxy coating surface ideal for bonding to scintillator Flatness: ±5 µm l Active area: 10 × 10 mm (Other sizes are also available on request.) Applications l Scintillation X-ray detectors l Calorimeters, etc. PHOTODIODE Si PIN photodiode Flat surface ideal for bonding to scintillator s Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage VR Max.100 V Operating temperature Topr -20 to +60 °C Storage temperature Tstg -20 to +80 °C s Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm λ=λp -0.66 - A/W BGO: λ=480 nm -0.30 - A/W Photo sensitivity S CsI (Tl): λ=540 nm -0.37 - A/W Dark current ID VR=70 V - 2 6 nA Cut-off frequency fc λ=780 nm, VR=70 V RL=50 Ω, -3 dB -40 - MHz Terminal capacitance Ct VR=70 V, f=1 MHz - 40 - pF Noise equivalent power NEP VR=70 V, λ=λp 3.8 × 10 -14 -W/Hz 1/2 1 |
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