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STN2NF10 Datasheet(PDF) 3 Page - STMicroelectronics |
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STN2NF10 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 13 page STN2NF10 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 100 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 2.4 A ID Drain current (continuous) at TC = 100°C 1.5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 17 A Derating factor 0.026 W/°C PTOT (2) 2. This value is rated according to Rthj-amb, t < 10sec Total dissipation at TC = 25°C 3.3 W EAS (3) 3. IAS = 2.4A, VDD = 30V, Rg=4.7Ω, starting Tj = 25°C Single pulse avalanche energy 200 mJ dv/dt (4) 4. ISD < 6A, di/dt < 500A/µs, VDD= 80% V(BR)DSS Peak diode recovery voltage slope 30 V/ns Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-amb (1) 1. When mounted on 1inch² FR-4 board, 2 oz. Cu, (t < 10sec) Thermal resistance junction-amb 38 °C/W Rthj-amb (2) 2. When mounted on 1inch² FR-4 board, 2 oz. Cu, (t >10sec) Thermal resistance junction-amb 62.5 °C/W |
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