HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho,

Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

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North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

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Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©200

5 Hamamatsu Photonics K.K.

NMOS linear image sensor

S5930/S5931 series

Cat. No. KMPD1018E03

Oct. 2005 DN

s

TE-cooler type 2 (T-06E 108P-RNO)characteristics

(built-in S5930-256S, S5931-512S)

Parameter

Condition

Value

Unit

Built-in resistance

Ta=25 °C

0.983

Ω

Maximum current

Tc -Th=20 °C

3.6

A

Maximum voltage

Tc -Th=80 °C

4.7

V

Maximum heat absorption

Tc -Th=20 °C

5.7

W

Figure 11 Voltage vs. temperature (Tc=0 °C)

KMPDB0169EA

Figure 12 Heat absorption vs. temperature (Tc=0 °C)

KMPDB0170EA

Figure 13 Voltage vs. temperature (Tc=20 °C)

KMPDB0171EA

Figure 14 Heat absorption vs. temperature (Tc=20 °C)

KMPDB0172EA

60

80

0

1

5

4

3

2

40

20

0

1.6 A

1.2 A

0.8 A

0.4 A

2.0 A

2.4 A

2.8 A

3.2 A

60

80

0

1

5

4

3

2

40

20

0

1.6 A

1.2 A

0.8 A

0.4 A

2.0 A

2.4 A

2.8 A

3.2 A

60

80

0

2

10

8

6

4

40

20

0

0.4 A

0.8 A

3.2 A

2.8 A

1.2 A

1.6 A

2.0 A

2.4 A

60

80

0

2

10

8

6

4

40

20

0

0.4 A

0.8 A

3.2 A

2.8 A

1.2 A

1.6 A

2.0 A

2.4 A