S2381 to S2385, S5139, S8611, S3884

Features

Applications

PHOTODIODE

Si APD

Low bias operation, for 800 nm band

1

s General ratings / Absolute maximum ratings

Absolute maximum ratings

Active area *

2

size

Effective active

area

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Dimensional

outline/

Window

material *

1

Package

(mm)

(mm

(°C)

(°C)

S2381

φ0.2

0.03

S2382

➀/K

S5139

➁/L

S8611

➂/L

φ0.5

0.19

S2383

S2383-10 *

3

➀/K

TO-18

φ1.0

0.78

S3884

➃/K

φ1.5

1.77

S2384

➄/K

TO-5

φ3.0

7.0

S2385

➅/K

TO-8

φ5.0

19.6

-20 to +85

-55 to +125

s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Br eak do w n

voltage

Dark

current *

4

Spectral

response

range

λ

sensitivity

w avelength

λp

Photo

sensitivity

S

M=1

λ=800 nm

Quantum

efficiency

QE

M=1

λ=800 nm

Temp.

coefficient

of

frequency

fc

Ω

capacitance

Ct

Excess

Noise

figure *

4

x

λ=800 nm

Gain

M

λ=800 nm

Type No.

(nm)

(nm)

(A/W )

(%)

Typ.

(V)

Max.

(V)

(V/°C)

Typ.

(nA)

Max.

(nA)

(MHz)

(pF)

S2381

0.05 0.5

1000

1.5

S2382

S5139

S8611

0.1

1

900

3

S2383

S2383-10 *

3

0.2

2

600

6

S3884

0.5

5

400

10

100

S2384

1

10

120

40

60

S2385

400 to 1000

800

0.5

75

150 200

0.65

330

40

95

0.3

40

*1: W indow material K: borosilicate glass, L: lens type borosilicate glass

*2: Active area in which a typical gain can be obtained

*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area

*4: Measured under conditions that the device is operated at the gain listed in the specification table

Note) The following different breakdown voltage ranges are available.

S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)

S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)