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R7110U-07 Datasheet(PDF) 1 Page - Hamamatsu Corporation |
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R7110U-07 Datasheet(HTML) 1 Page - Hamamatsu Corporation |
1 / 2 page GENERAL Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Target Suitable Socket nm nm — mm dia. — — — 160 to 850 420 Multialkali 8 Synthetic Silica 3 mm Single-element Electron Bombarded Si-Avalanche Diode E678-12M (Supplied) Material Minimum Effective Area a COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target R7110U-07 MAXIMUM RATINGS (Absolute Maximum Values) Information furnished by HA MAM ATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office. CHARACTERISTICS (at 25 °C) Parameter Min. Unit Parameter Value Unit Supply Voltage Avalanche Diode Reverse Bias Voltage Ambient Temperature -8500 155 b -40 to +50 Vdc V °C Cathode Sensitivity Gain c Time Response c Diode (Target) Luminous (2856K) Radiant at 420 nm Rise Time Fall Time Width Leakage Current d Capacitance d 100 — — — — — — — 130 51 4 × 104 1.3 15 5 — 120 µA/lm mA/W — ns ns ns nA pF — — — — — — 50 — Typ. Max. NOTE: aWithout magnetic fields bat 25 °C cPhotocathode Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: approx.145 V dAvalanche Diode Reverse Bias Voltage: approx.145 V FEATURES q Low excess noise q High gain q Operable in high magnetic fields q Low hysteresis APPLICATIONS q High energy physics q Medical q Other high precision measurements PRELIMINARY DATA SEPT. 2000 |
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