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R7110U-07 Datasheet(PDF) 1 Page - Hamamatsu Corporation

Part # R7110U-07
Description  COMPACT HYBRID PHOTO-DETECTOR
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Manufacturer  HAMAMATSU [Hamamatsu Corporation]
Direct Link  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

R7110U-07 Datasheet(HTML) 1 Page - Hamamatsu Corporation

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GENERAL
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Target
Suitable Socket
nm
nm
mm dia.
160 to 850
420
Multialkali
8
Synthetic Silica
3 mm Single-element Electron
Bombarded Si-Avalanche Diode
E678-12M (Supplied)
Material
Minimum Effective Area a
COMPACT HYBRID
PHOTO-DETECTOR
with Si-Avalanche Diode Target
R7110U-07
MAXIMUM RATINGS (Absolute Maximum Values)
Information furnished by HA MAM ATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
©2000 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
CHARACTERISTICS (at 25
°C)
Parameter
Min.
Unit
Parameter
Value
Unit
Supply Voltage
Avalanche Diode Reverse Bias Voltage
Ambient Temperature
-8500
155 b
-40 to +50
Vdc
V
°C
Cathode Sensitivity
Gain c
Time Response c
Diode (Target)
Luminous (2856K)
Radiant at 420 nm
Rise Time
Fall Time
Width
Leakage Current d
Capacitance d
100
130
51
4
× 104
1.3
15
5
120
µA/lm
mA/W
ns
ns
ns
nA
pF
50
Typ.
Max.
NOTE: aWithout magnetic fields
bat 25
°C
cPhotocathode Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: approx.145 V
dAvalanche Diode Reverse Bias Voltage: approx.145 V
FEATURES
q Low excess noise
q High gain
q Operable in high magnetic fields
q Low hysteresis
APPLICATIONS
q High energy physics
q Medical
q Other high precision measurements
PRELIMINARY DATA
SEPT. 2000


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