PbSe photoconductive detector

P791/P2038/P2680 series, P3207-05

(Typ.)

10

1

10

2

10

3

020

10

40

50

30

60

-20

-10

DARK RESISTANCE

RISE TIME

(Typ.)

10

1

10

2

-20

10

3

-10

0

102030405060

LIGHT SOURCE: BLACK BODY 500 K

SUPPLY VOLTAGE: 15 V

INCIDENT ENERGY: 16.7 µW/cm

2

CHOPPING FREQUENCY: 600 Hz

CHOPPING FREQUENCY (Hz)

(Typ. Ta=25 ˚C)

10

1

10

2

10

3

10

2

10

3

10

4

S/N

S

N

LIGHT SOURCE: BLACK BODY 500 K

INCIDENT ENERGY: 16.7 µW/cm

2

SUPPLY VOLTAGE: 15 V

100

70

80

90

(Typ. Ta=25 ˚C)

0

0

100

200

300

600

500

400

0

6

3

12

15

9

18

10

20

30

40

50

60

LIGHT SOURCE: BLACK BODY 500 K

INCIDENT ENERGY: 16.7 µW/cm

2

CHOPPING FREQUENCY: 600 Hz

FREQUENCY BANDWIDTH: 60 Hz

Supply voltage is the

value which contains

load resistance

N

S

s Spectral response

s S/N vs. supply voltage

s S/N vs. chopping frequency

s Photo sensitivity temperature characteristic

s Dark resistance, rise time temperature characteristics

KIRDB0280EA

KIRDB0281EA

KIRDB0054EB

KIRDB0055EB

P791/P2038/P2680

series

P3207-05

Increasing the chopping frequency re-

duces the 1/f noise and results in an S/N

improvement. The S/N can also be im-

proved by narrowing the noise bandwidth

using a lock-in amplifier.

KIRDB0052EC

KIRDB0053EB

Cooling the device enhances its sensi-

tivity, but the sensitivity also depends

on the load resistance in the circuit.

(Typ.)

1234567

0

20

40

60

80

100

-20 ˚C

-10 ˚C

25 ˚C

WAVELENGTH (

µm)

(Typ.)

1234567

0

20

40

60

80

100

2