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G9906-01 Datasheet(PDF) 2 Page - Hamamatsu Corporation

Part No. G9906-01
Description  InGaAs PIN photodiode
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Maker  HAMAMATSU [Hamamatsu Corporation]
Homepage  http://www.hamamatsu.com
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G9906-01 Datasheet(HTML) 2 Page - Hamamatsu Corporation

   
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InGaAs PIN photodiode
G9906-01
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
Cat. No. KIRD1075E02
Jun. 2006 DN
-40
100
60
20
-20
80
40
0
1 M
1 T
100 G
1 G
10 M
10 G
100 M
ELEMENT TEMPERATURE (˚C)
(Typ. VR=10 mV)
WAVELENGTH (µm)
1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62 1.63 1.64
-0.5
0.5
(Typ.
λ=1.58 µm, T=10 ˚C standard, Flat window)
0.4
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
-10 ˚C
0 ˚C
10 ˚C
25 ˚C
35 ˚C
45 ˚C
55 ˚C
65 ˚C
75 ˚C
85 ˚C
0.01
100
10
1
0.1
1 pA
10 nA
1 nA
100 pA
10 pA
REVERSE VOLTAGE (V)
(Typ. Ta=25 ˚C)
2
s Spectral response
KIRDB0341EA
s Dark current vs. reverse voltage
KIRDB0339EA
s Terminal capacitance vs. reverse voltage
KIRDB0340EA
s Dimensional outline (unit: mm)
s Shunt resistance vs. element temperature
KIRDB0338EA
0.01
100
10
1
0.1
100 fF
1 nF
100 pF
10 pF
1 pF
REVERSE VOLTAGE (V)
(Typ. Ta=25 ˚C)
0.45 ± 0.05
10 MIN.
2.45-0.05
+0.25
1.96-0.05
+0.10
PHOTOSENSITIVE SURFACE
ANODE
CATHODE
CHIP CENTER TO BASE CENTER
X, Y
≤±0.1
KIRDA0186EB


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