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TPS622F Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # TPS622F
Description  Silicon NPN Epitaxial Planar
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPS622F Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TPS622(F)
2007-10-01
1
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS622(F)
Lead(Pb)-Free
Opto
-electronic Switch
Optical Mouse
Optical Touch Switch
• Compact side view epoxy resin package
• High response speed: tr, tf = 6μs (typ.)
• Half value angle: θ1/2 = ±15° (typ.)
• Visible light cut type (black package)
• Optimum in combination with infrared LED TLN117(F) with
identical external dimensions.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector
−emitter voltage
VCEO
30
V
Emitter
−collector voltage
VECO
5
V
Collector current
IC
50
mA
Collector power dissipation
PC
75
mW
Collector power dissipation derating
(Ta > 25°C)
ΔPC / °C
−1
mW / °C
Operating temperature range
Topr
−25~85
°C
Storage temperature range
Tstg
−40~100
°C
Soldering temperature (5s)
Tsol
260 (Note 1)
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Soldering portion of lead: At least 2mm from the body of the device.
Opto-electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Dark current
ID(ICEO)
VCE = 24V, E = 0
0.005
0.1
μA
Light current
IL
E = 0.1mW / cm
2,
VCE = 3V
(Note 2,3)
27
70
μA
Collector
−emitter saturation
voltage
VCE(sat)
E = 0.1mW / cm
2,
IL = 15μA
0.15
0.4
V
Peak sensitivity wavelength
λP
870
nm
Half value angle
θ
2
1
±15
°
Rise time
tr
6
Switching time
Fall time
tf
VCC = 5V, IC = 2mA
RL = 100Ω
6
μs
Unit in : mm
TOSHIBA
0 – 3G1
Weight: 0.1 g (typ.)


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