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TPCS8303 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPCS8303 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCS8303 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.45~−1.2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±12 V DC (Note 1) ID −5 Drain current Pulse (Note 1) IDP −20 A Single-device operation (Note 3a) PD (1) 1.1 Drain power dissipation (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (2) 0.75 W Single-device operation (Note 3a) PD (1) 0.6 Drain power dissipation (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.35 W Single pulse avalanche energy (Note 4) EAS 16.3 mJ Avalanche current IAR −5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.075 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 |
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