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TPCS8004 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPCS8004 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCS8004 2004-07-06 5 0 0 40 4 8 12 16 80 120 160 0 4 8 12 16 Common source ID = 1.3 A Ta = 25 °C VDS 40 80 VGS VDD = 160 V Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) PD – Ta 1 10 100 1000 0.1 1 10 100 Common source Ta = 25°C f = 1MHz VGS = 0 V Crss Coss Ciss 0.1 0.5 1 5 −0.03 −0.1 −0.3 −0.5 −1 −3 −0.05 3 0.3 10 3 V 0, −1 V VGS = 10 V 5 V Common source Ta = 25°C Pulse test Total gate charge Qg (nC) Dynamic input/output characteristics 0 0.2 0.4 0 0.8 1.2 −80 −40 0 40 80 160 Common source Pulse test 1.0 120 ID = 0.32 A 0.65 A 1.3 A VGS = 10 V 0 1 2 3 4 5 −80 −40 0 40 80 160 Common source VDS = 10 V ID = 1 mA Pulse test 120 0 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 (2) (1) |
Similar Part No. - TPCS8004_07 |
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Similar Description - TPCS8004_07 |
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