8N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-115,B

PARAMETER

SYMBOL

RATINGS

UNIT

8N60-A

600

V

Drain-Source Voltage

8N60-B

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

7.5

A

7.5

A

Continuous Drain Current

4.6

A

Pulsed Drain Current (Note 1)

30

A

Single Pulsed (Note 2)

230

mJ

Avalanche Energy

Repetitive (Note 1)

14.7

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220

147

W

Power Dissipation

TO-220F

48

W

Junction Temperature

+150

℃

Operating Temperature

-55 ~ +150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

TO-220

62.5

°C/W

Junction-to-Ambient

TO-220F

62.5

°C/W

TO-220

0.85

°C/W

Junction-to-Case

TO-220F

2.6

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

8N60-A

600

V

Drain-Source Breakdown Voltage

8N60-B

650

V

Drain-Source Leakage Current

10

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

Breakdown Voltage Temperature

Coefficient

BV

△

0.7

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

1.0

1.2

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

965 1255 pF

Output Capacitance

105 135

pF

Reverse Transfer Capacitance

12

16

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

16.5

45

ns

Turn-On Rise Time

60.5 130

ns

Turn-Off Delay Time

81

170

ns

Turn-Off Fall Time

(Note 4, 5)

64.5 140

ns

Total Gate Charge

28

36

nC

Gate-Source Charge

4.5

nC

Gate-Drain Charge

(Note 4, 5)

12

nC