2

Electrical Specifications

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector-Emitter Breakdown Voltage

600

-

-

V

Collector-Emitter Leakage Current

-

-

250

µA

-

-

2.0

mA

Collector-Emitter Saturation Voltage

-

1.65

2.0

V

-

1.85

2.2

V

Gate-Emitter Threshold Voltage

3.0

5.5

6.0

V

Gate-Emitter Leakage Current

-

-

±250

nA

Switching SOA

SSOA

L = 1mH

18

-

-

A

2

-

-

A

Gate-Emitter Plateau Voltage

-

8.3

-

V

On-State Gate Charge

IC = IC110,

VCE = 0.5 BVCES

-

10.8

13.5

nC

-

13.8

17.3

nC

Current Turn-On Delay Time

L = 1mH

-5-

ns

Current Rise Time

-10-

ns

Current Turn-Off Delay Time

-

325

400

ns

Current Fall Time

-

130

275

ns

Turn-On Energy

-85-

µJ

Turn-Off Energy (Note 1)

-

245

-

µJ

Diode Forward Voltage

-

2.0

2.5

V

Diode Reverse Recovery Time

-

22

28

ns

-

17

22

ns

Thermal Resistance

IGBT

-

-

3.75

Diode

-

-

3.0

NOTE:

were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces

the true total Turn-Off Energy Loss. Turn-On losses include diode losses.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,567,641

4,587,713

4,598,461

4,605,948

4,618,872

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

Specifications HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS