60N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-121.A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

60

V

Gate to Source Voltage

±

20

V

60

A

Continuous Drain Current

39

A

Drain Current Pulsed (Note 1)

120

A

Single Pulsed (Note 2)

1000

mJ

Avalanche Energy

Repetitive (Note 1)

180

mJ

Total Power Dissipation

120

W

Junction Temperature

+175

℃

Storage Temperature

-55 ~ +175

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal Resistance Junction-Ambient

62.5

℃

/W

Thermal Resistance Junction-Case

1.25

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

14

18

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

2000

pF

Output Capacitance

400

pF

Reverse Transfer Capacitance

115

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

12

30

ns

Rise Time

11

30

ns

Turn-Off Delay Time

25

50

ns

Fall Time

15

30

ns

Total Gate Charge

39

60

nC

Gate-Source Charge

12

nC

Gate-Drain Charge (Miller Charge)

10

nC