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FS50KMJ-06 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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FS50KMJ-06 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page  Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns 60 — — 1.0 — — — — — — — — — — — — — — — — — 1.5 15 18 0.38 41 3000 580 300 22 65 250 160 1.0 — 70 — ±0.1 0.1 2.0 20 24 0.50 — — — — — — — — 1.5 4.17 — ELECTRICAL CHARACTERISTICS (Tch = 25 °C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50 Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/ µs PERFORMANCE CURVES 0 10 20 30 40 50 0 200 50 100 150 0 20 40 60 80 100 012345 VGS = 10V TC = 25°C Pulse Test 4V 5V 3V PD = 30W 100 3 5 7 101 2 3 5 7 102 2 3 2 3 5 7 100 2101 35 7 35 7 2 102 35 7 2 3 TC = 25°C Single Pulse tw = 10 ms 100 ms 1ms 10ms DC 100ms POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 5V VGS = 10V 4V TC = 25°C Pulse Test 3.5V 2.5V PD = 30W 3V |
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