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IRS212PBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRS212PBF
Description  CURRENT SENSING SINGLE CHANNEL DRIVER
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRS212PBF Datasheet(HTML) 1 Page - International Rectifier

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Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage dV/dt immune
Application-specific gate drive range:
Motor Drive: 12 V to 20 V (IRS2127/IRS2128)
Automotive: 9 V to 20 V (IRS21271/IRS21281)
Undervoltage lockout
3.3 V, 5 V, and 15 V input logic compatible
FAULT lead indicates shutdown has occured
Output in phase with input (IRS2127/IRS21271)
Output out of phase with input (IRS2128/IRS21281)
CURRENT SENSING SINGLE CHANNEL DRIVER
VOFFSET
600 V max.
IO+/-
200 mA / 420 mA
VOUT
12 V - 20V
9 V - 20 V
(IRS2127/IR2128) (IRS21271/IR21281)
VCSth
250 mV or 1.8 V
ton/off (typ.)
150 ns & 150 ns
Typical Connection
www.irf.com
1
Packages
IRS2127/IRS21271
IRS2128/IRS21281
8-Lead PDIP
8-Lead SOIC
IRS212(7, 71, 8, 81)(S)PbF
Data Sheet No. PD
60299
Description
The IRS2127/IRS2128/IRS21271/IRS21281 are
high voltage, high speed power MOSFET and IGBT
drivers. Proprietary HVIC and latch immune CMOS
technologies enable ruggedized monolithic construc-
tion. The logic input is compatible with standard
CMOS or LSTTL outputs, down to 3.3 V. The protec-
tion circuity detects over-current in the driven power
transistor and terminates the gate drive voltage. An
open drain FAULT signal is provided to indicate that
an over-current shutdown has occurred. The output
Product Summary
V
CC
V
B
CS
HO
V
S
COM
IN
FAULT
V
CC
IN
FAULT
V
CC
V
B
CS
HO
V
S
COM
IN
FAULT
V
CC
IN
FAULT
(Refer to Lead Assignments for correct pin configuration).
These diagrams show electrical connections only. Please
refer to our Application Notes and DesignTips for proper
circuit board layout.
driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating chan-
nel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which
operates up to 600 V.
RoHS compliant


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