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IRF7478QPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7478QPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 09/04/07 IRF7478QPbF HEXFET® Power MOSFET Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A IDM Pulsed Drain Current 56 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 3.7 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 8 SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A VDSS RDS(on) max (mW) ID 60V 26@VGS = 10V 4.2A 30@VGS = 4.5V 3.5A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance l Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Automotive [Q101] Qualified l Lead-Free Description Specifically designed for Automotive applications. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SMPS MOSFET PD- 96128 |
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