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S29GL032N11FFIV13 Datasheet(PDF) 67 Page - SPANSION

Part # S29GL032N11FFIV13
Description  64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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S29GL032N11FFIV13 Datasheet(HTML) 67 Page - SPANSION

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November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit® Flash Family
67
Data
She e t
Notes
1. Not 100% tested.
2. See the Erase And Programming Performance on page 73 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes (that is, the program
resume command is written). If the suspend command was issued after tPOLL, status data is available immediately after programming resumes. See Figure 15.5
on page 68.
Table 15.3 Erase and Program Operations
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
110
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tBUSY
WE# High to RY/BY# Low
Min
90
110
ns


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