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74LVC1G58GF Datasheet(PDF) 9 Page - NXP Semiconductors |
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74LVC1G58GF Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 18 page 74LVC1G58_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 27 August 2007 9 of 18 NXP Semiconductors 74LVC1G58 Low-power configurable multiple function gate 13. Transfer characteristics Test data is given in Table 11. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 13. Load circuitry for switching times VEXT VCC VI VO mna616 DUT CL RT RL RL G Table 11. Test data Supply voltage Input Load VEXT VCC VI tr =tf CL RL tPLH, tPHL 1.65 V to 1.95 V VCC ≤ 2.0 ns 30 pF 1 k Ω open 2.3 V to 2.7 V VCC ≤ 2.0 ns 30 pF 500 Ω open 2.7 V 2.7 V ≤ 2.5 ns 50 pF 500 Ω open 3.0 V to 3.6 V 2.7 V ≤ 2.5 ns 50 pF 500 Ω open 4.5 V to 5.5 V VCC ≤ 2.5 ns 50 pF 500 Ω open Table 12. Transfer characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max VT+ positive-going threshold voltage see Figure 14, Figure 15, Figure 16 and Figure 17 VCC = 1.8 V 0.70 1.02 1.20 0.67 1.20 V VCC = 2.3 V 1.11 1.42 1.60 1.08 1.60 V VCC = 3.0 V 1.50 1.79 2.00 1.47 2.00 V VCC = 4.5 V 2.16 2.52 2.74 2.13 2.74 V VCC = 5.5 V 2.61 2.99 3.33 2.58 3.33 V VT− negative-going threshold voltage see Figure 14, Figure 15, Figure 16 and Figure 17 VCC = 1.8 V 0.30 0.53 0.72 0.30 0.75 V VCC = 2.3 V 0.58 0.77 1.00 0.58 1.03 V VCC = 3.0 V 0.80 1.04 1.30 0.80 1.33 V VCC = 4.5 V 1.21 1.55 1.90 1.21 1.93 V VCC = 5.5 V 1.45 1.86 2.29 1.45 2.32 V |
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