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BFG67 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFG67 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Fig.4 DC current gain as a function of collector current. VCE =5V. handbook, halfpage 0 120 80 40 0 20 40 MBB301 60 I (mA) C FE h Fig.5 Feedback capacitance as a function of collector-base voltage. IC =ic = 0; f = 1 MHz. handbook, halfpage 0 0.8 0.6 0.4 0.2 4 MBB302 812 16 Cre (pF) VCB (V) 0 Fig.6 Transition frequency as a function of collector current. VCE = 8 V; Tamb =25 °; f = 2 GHz. handbook, halfpage 010 20 40 8 6 2 0 4 MBB303 30 I (mA) C (GHz) T f 10 Fig.7 Gain as a function of collector current. VCE = 8 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage gain (dB) IC (mA) 0 20 15 10 0 10 20 40 MBB304 30 25 5 MSG G UM max G Rev. 05 - 23 November 2007 5 of 14 |
Similar Part No. - BFG67 |
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Similar Description - BFG67 |
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