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BF1100R Datasheet(PDF) 9 Page - NXP Semiconductors |
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BF1100R Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page NXP Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R Fig.19 Input admittance as a function of frequency; typical values. VDS = 9 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. handbook, halfpage 10 3 MLD172 102 10 10 1 10 2 10 1 y is (mS) f (MHz) b is g is VDS = 9 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. Fig.20 Reverse transfer admittance and phase as a function of frequency; typical values. 10 3 MLD173 102 10 10 3 10 2 10 1 y rs 10 3 10 10 1 2 ( µS) f (MHz) yrs rs (deg) ϕ rs ϕ Fig.21 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 9 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. 10 3 MLD174 102 10 1 10 2 10 1 10 10 2 y fs (mS) y fs f (MHz) fs (deg) ϕ fs ϕ Fig.22 Output admittance as a function of frequency; typical values. VDS = 9 V; VG2 =4V. ID =10 mA; Tamb =25 °C. handbook, halfpage 10 3 MLD175 102 10 10 1 10 1 10 2 yos (mS) f (MHz) bos gos Rev. 02 - 13 November 2007 9 of 15 |
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