NXP Semiconductors

Product specification

Dual-gate MOS-FETs

BF908; BF908R

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

12

V

drain current

−

40

mA

gate 1 current

−

10

mA

gate 2 current

−

10

mA

total power dissipation

see Fig.3; note 1

BF908

−

200

mW

BF908R

−

200

mW

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

Fig.3 Power derating curves.

handbook, halfpage

0

50

100

150

200

250

0

50

100

150

200

BF908

BF908R

P

tot

(mW)

Tamb ( C)

o

MRC275

Rev. 03 - 14 November 2007

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