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HAT2197R Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAT2197R
Description  Silicon N Channel Power MOS FET Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HAT2197R Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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HAT2197R
Rev.2.00, Apr.02.2004, page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
16
A
Drain peak current
ID(pulse)
Note1
128
A
Body-drain diode reverse drain current
IDR
16
A
Avalanche current
IAP
Note 2
16
A
Avalanche energy
EAR
Note 2
25.6
mJ
Channel dissipation
Pch
Note3
2.5
W
Channel to ambient thermal impedance
θch-a Note3
50
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25
°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤ 10s
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
——± 0.1
µAVGS = ±20 V, VDS = 0
Zero gate voltage drain current
IDSS
——1
µAVDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—5.3
6.7
m
ID = 8 A, VGS = 10 V
Note4
resistance
RDS(on)
—6.8
9.9
m
ID = 8 A, VGS = 4.5 V
Note4
Forward transfer admittance
|yfs|
2238—
S
ID = 8 A, VDS = 10 V
Note4
Input capacitance
Ciss
2650
pF
VDS = 10 V
Output capacitance
Coss
610
pF
VGS = 0
Reverse transfer capacitance
Crss
190
pF
f = 1 MHz
Gate Resistance
Rg
1.2
Total gate charge
Qg
18
nC
VDD = 10 V
Gate to source charge
Qgs
7.5
nC
VGS = 4.5 V
Gate to drain charge
Qgd
4.2
nC
ID = 16 A
Turn-on delay time
td(on)
—10
ns
VGS = 10 V, ID = 8 A
Rise time
tr
—25
ns
VDD
≅ 10 V
Turn-off delay time
td(off)
—45
ns
RL = 1.25
Fall time
tf
4.2
ns
Rg = 4.7
Body–drain diode forward voltage VDF
0.80
1.04
V
IF = 16 A, VGS = 0
Note4
Body–drain diode reverse
recovery time
trr
30
ns
IF = 16 A, VGS = 0
diF/ dt = 100 A/
µs
Notes: 4. Pulse test


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