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HAT2197R Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HAT2197R Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 8 page 
HAT2197R Rev.2.00, Apr.02.2004, page 4 of 7 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature 12 10 8 6 4 -25 0 50 25 100 75 125 150 2 I = 20 A D 5 A, 10 A, 20 A V = 4.5 V GS 10 V Pulse Test 5, 10 A Drain Current I (A) D Forward Transfer Admittance vs. Drain Current 330 0.1 1 10 100 0.3 10 100 1000 1 Tc = –25°C DS V = 10 V Pulse Test 75°C 25°C Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time 1 10 100 100 20 50 10 0.1 di/dt = 100 A/ µs V = 0, Ta = 25°C GS Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage 010 515 20 25 30 10000 3000 1000 300 100 30 10 Ciss Coss Crss V = 0 f = 1 MHz GS Gate Charge Qg (nC) Dynamic Input Characteristics 50 40 30 20 10 0 20 16 12 8 4 16 32 48 64 80 0 I = 16 A D VGS VDS V = 25 V 10 V 5 V DD V = 25 V 10 V 5 V DD Drain Current I (A) D Switching Characteristics 100 10 1 1 10 100 0.1 1000 V = 10 V , V = 10 V Rg = 4.7 , duty < 1 % GS DS Ω d(on) t d(off) t r t t f |
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