NESG3032M14-A datasheet(2/6 Pages) CEL

Part #	NESG3032M14-A

Description	NPN SILICON GERMANIUM RF TRANSISTOR

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Manufacturer	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

100

nA

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 6 mA

220

300

380

−

RF Characteristics

Insertion Power Gain

⏐S21e⏐2 VCE = 2 V, IC = 15 mA, f = 2.0 GHz

15.0

17.5

−

dB

Noise Figure

NF

VCE = 2 V, IC = 6 mA, f = 2.0 GHz,

ZS = ZSopt, ZL = ZLopt

−

0.60

0.85

dB

Associated Gain

Ga

VCE = 2 V, IC = 6 mA, f = 2.0 GHz,

ZS = ZSopt, ZL = ZLopt

−

17.5

−

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

−

0.15

0.25

pF

Maximum Stable Power Gain

MSG

Note

3

VCE = 2 V, IC = 15 mA, f = 2.0 GHz

17.5

20.5

−

dB

Gain 1 dB Compression Output Power

PO (1 dB)

VCE = 3 V, IC (set) = 20 mA,

f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt

−

12.5

−

dBm

3rd Order Intermodulation Distortion

Output Intercept Point

OIP3

VCE = 3 V, IC (set) = 20 mA,

f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt

−

24.0

−

dBm

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MSG =

hFE CLASSIFICATION

Rank

FB

Marking

zN

hFE Value

220 to 380

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave]

→ [Device Parameters]

URL http://www.ncsd.necel.com/

S21

S12

Data Sheet PU10575EJ01V0DS

2

NESG3032M14

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