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FDI12N50TU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDI12N50TU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page FDB12N50 TM Rev. A1 www.fairchildsemi.com 2 Package Marking and Ordering Information T C = 25 oC unless otherwise noted Electrical Characteristics Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDB12N50 FDB12N50TM D2-PAK 330mm 24mm 800 FDI12N50 FDI12N50TU I2-PAK - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25oC - 0.66 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 μA VDS = 400V, TC = 125oC- - 10 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 6A - 0.55 0.65 Ω gFS Forward Transconductance VDS = 25V, ID = 6A (Note 4) -11 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 985 1315 pF Coss Output Capacitance - 140 190 pF Crss Reverse Transfer Capacitance - 12 17 pF Qg Total Gate Charge at 10V VDS = 400V, ID = 11.5A VGS = 10V (Note 4, 5) -22 30 nC Qgs Gate to Source Gate Charge - 6 - nC Qgd Gate to Drain “Miller” Charge - 10 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 11.5A RG = 25Ω (Note 4, 5) -25 60 ns tr Turn-On Rise Time - 60 130 ns td(off) Turn-Off Delay Time - 45 105 ns tf Turn-Off Fall Time - 35 85 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 46 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 11.5A - - 1.4 V trr Reverse Recovery Time VGS = 0V, ISD = 11.5A dIF/dt = 100A/μs (Note 4) - 370 - ns Qrr Reverse Recovery Charge - 3.8 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
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