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FDI12N50TU Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # FDI12N50TU
Description  N-Channel MOSFET 500V, 11.5A, 0.65廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDI12N50TU Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDB12N50
TM Rev. A1
www.fairchildsemi.com
2
Package Marking and Ordering Information T
C = 25
oC unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB12N50
FDB12N50TM
D2-PAK
330mm
24mm
800
FDI12N50
FDI12N50TU
I2-PAK
-
-
50
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TJ = 25oC
500
-
-
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25oC
-
0.66
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
1
μA
VDS = 400V, TC = 125oC-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250μA3.0
-
5.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 6A
-
0.55
0.65
Ω
gFS
Forward Transconductance
VDS = 25V, ID = 6A
(Note 4)
-11
-
S
Ciss
Input Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
985
1315
pF
Coss
Output Capacitance
-
140
190
pF
Crss
Reverse Transfer Capacitance
-
12
17
pF
Qg
Total Gate Charge at 10V
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4, 5)
-22
30
nC
Qgs
Gate to Source Gate Charge
-
6
-
nC
Qgd
Gate to Drain “Miller” Charge
-
10
-
nC
td(on)
Turn-On Delay Time
VDD = 250V, ID = 11.5A
RG = 25Ω
(Note 4, 5)
-25
60
ns
tr
Turn-On Rise Time
-
60
130
ns
td(off)
Turn-Off Delay Time
-
45
105
ns
tf
Turn-Off Fall Time
-
35
85
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
11.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
46
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
-
-
1.4
V
trr
Reverse Recovery Time
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/μs
(Note 4)
-
370
-
ns
Qrr
Reverse Recovery Charge
-
3.8
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width
≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics


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