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SYS88000RKXL-12 Datasheet(PDF) 2 Page - MOSAIC |
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SYS88000RKXL-12 Datasheet(HTML) 2 Page - MOSAIC |
2 / 7 page ISSUE 1.5 : April 2001 SYS88000RKX - 85/10/12 2 Parameter Symbol Test Condition Min Typ max Unit I/P Leakage Current Address,OE,WE I LI 0V < V IN < VCC -16 - 16 µA Output Leakage Current I LO CS = V IH, VI/O = GND to VCC -16 - 16 µA Operating Current I CC1 Min. Cycle, CS = V IL,VIL<VIN<VIH - - 170 mA Standby Supply Current TTL levels I SB1 CS = V IH -- 48 mA CMOS levels I SB2 CS > V CC-0.2V, 0.2<VIN<VCC-0.2V -- 32 mA -L Version (CMOS) I SB3 CS > V CC-0.2V, 0.2<VIN<VCC-0.2V -- 2 mA Output Voltage V OL I OL = 8.0mA - - 0.4 V V OH I OH = -4.0mA 2.4 - - V Typical values are at V CC=5.0V,TA=25 oC and specified loading. Add 800mA to -L CMOS standby currents to obtain industrial temp range parameters. Voltage on any pin relative to V SS V T -0.3 - 7.0 V Power Dissipation P T - 1.0 - W Storage Temperature T STG -55 - 125 oC Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Min Typ Max Unit Absolute Maximum Ratings (1) Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply Voltage V CC 4.5 5.0 5.5 V Input High Voltage V IH 2.2 - V CC+0.3 V Input Low Voltage V IL -0.3 - 0.8 V Operating Temperature (Commercial) T A 0 - 70 oC (Industrial) T AI -40 - 85 oC Capacitance (V CC=5V±10%,TA=25 oC) Note: Capacitance calculated, not measured. Parameter Symbol Test Condition max Unit Input Capacitance (Address,OE,WE) C IN1 V IN = 0V 128 pF I/P Capacitance (other) C IN2 V IN = 0V 10 pF I/O Capacitance C I/O V I/O = 0V 160 pF DC Electrical Characteristics (V CC=5V±10%) TA 0 to 70 oC |
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