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BQ24100 Datasheet(PDF) 5 Page - Texas Instruments

Part No. BQ24100
Description  SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH INTEGRATED POWER FETs (bqSWITCHER™)
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
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BQ24100 Datasheet(HTML) 5 Page - Texas Instruments

 
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bq24100, bq24103, bq24103A
bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606K – JUNE 2004 – REVISED NOVEMBER 2007
ELECTRICAL CHARACTERISTICS (continued)
TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC ≤ VIBAT
VCC ≤ VIBAT
2.3 V
≤ VI(OUT) ≤ VOREG, for 1 or 2 cells
+5 mV
+75 mV
VSLP-ENT
Sleep-mode entry threshold
V
VI(OUT) = 12.6 V, RIN = 1 kΩ
VCC ≤ VIBAT
VCC ≤ VIBAT
bq24105/15(1)
-4 mV
+73 mV
VSLP-EXIT
Sleep-mode exit hysteresis,
2.3 V
≤ VI(OUT)≤ VOREG
40
160
mV
VCC decreasing below threshold,
tFALL = 100 ns, 10-mV overdrive,
5
µs
PMOS turns off
tdg-SLP
Deglitch time for sleep mode
VCC decreasing below threshold,
tFALL = 100 ns, 10-mV overdrive,
20
30
40
ms
STATx pins turn off
UVLO
VUVLO-ON
IC active threshold voltage
VCC rising
3.15
3.30
3.50
V
IC active hysteresis
VCC falling
120
150
mV
PWM
7 V
≤ VCC ≤ VCC(max)
400
Internal P-channel MOSFET on-resistance
4.5 V
≤ VCC ≤ 7 V
500
m
7 V
≤ VCC ≤ VCC(max)
130
Internal N-channel MOSFET on-resistance
4.5 V
≤ VCC ≤ 7 V
150
fOSC
Oscillator frequency
1.1
MHz
Frequency accuracy
–9%
9%
DMAX
Maximum duty cycle
100%
DMIN
Minimum duty cycle
0%
tTOD
Switching delay time (turn on)
20
ns
tsyncmin
Minimum synchronous FET on time
60
ns
Synchronous FET minimum current-off
50
400
mA
threshold (2)
BATTERY DETECTION
Battery detection current during time-out
IDETECT
VI(BAT) < VOREG – VRCH
2
mA
fault
IDISCHRG1
Discharge current
VSHORT < VI(BAT) < VOREG – VRCH
400
µA
tDISCHRG1
Discharge time
VSHORT < VI(BAT) < VOREG – VRCH
1
s
IWAKE
Wake current
VSHORT < VI(BAT) < VOREG – VRCH
2
mA
tWAKE
Wake time
VSHORT < VI(BAT) < VOREG – VRCH
0.5
s
Begins after termination detected,
IDISCHRG2
Termination discharge current
400
µA
VI(BAT) ≤ VOREG
tDISCHRG2
Termination time
262
ms
OUTPUT CAPACITOR
Required output ceramic capacitor range
COUT
from SNS to PGND, between inductor and
4.7
10
47
µF
RSNS
Required SNS capacitor (ceramic) at SNS
CSNS
0.1
µF
pin
PROTECTION
Threshold over VOREG to turn off P-channel
VOVP
OVP threshold voltage
MOSFET, STAT1, and STAT2 during charge
110
117
121
%VO(REG)
or termination states
ILIMIT
Cycle-by-cycle current limit
2.6
3.6
4.5
A
VSHORT
Short-circuit voltage threshold, BAT
VI(BAT) falling
1.95
2
2.05
V/cell
ISHORT
Short-circuit current
VI(BAT) ≤ VSHORT
35
65
mA
TSHTDWN
Thermal trip
165
°C
Thermal hysteresis
10
(1)
For bq24105 and bq24115 only. RIN is connected between IN and PGND pins and needed to ensure sleep entry.
(2)
N-channel always turns on for ~60 ns and then turns off if current is too low.
Copyright © 2004–2007, Texas Instruments Incorporated
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Product Folder Link(s): bq24100, bq24103, bq24103A bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115


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