SYS82000RKXDL-10 datasheet(1/7 Pages) MOSAIC

Part #	SYS82000RKXDL-10

Description	2M x 8 SRAM MODULE

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Manufacturer	MOSAIC [MOSAIC]

Direct Link	http://www.mosaicsemi.com

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1 / 7 page

A0~A18

/OE

/WE

/CS

D0~7

512K x 8

SRAM

512K x 8

SRAM

Decoder

A19

/CS

512K x 8

SRAM

/CS

512K x 8

SRAM

/CS

A20

Address Inputs

A0 - A20

Data Input/Output

D0 - D7

Chip Select

CS

Write Enable

WE

Output Enable

OE

No Connect

NC

Power (+5V)

V

CC

Ground

GND

Package Details

SYS82000RKXD - 85/10/12

Block Diagram

Pin Functions

Pin Definition

Description

Features

Issue 1.4 : April 2001

2M x 8 SRAM MODULE

• Access Times of 85/100/120ns.

• 36 Pin Industry Standard Single-In-Line package.

• 5 Volt Supply ± 10% .

• Power Dissipation :

Operating (min cycle)

610 mW (max).

Standby -L Version (CMOS)

2.2 mW (max).

• Completely Static Operation.

• Equal Access and Cycle Times.

• Low Voltage VCC Data Retention.

• Directly TTL Compatible.

• On-board Decoding & Capacitors.

• Compatible with the SYS8512RKX, SYS81000RKXB

and SYS82000RKX modules.

The SYS82000RKXD is a plastic 16Mbit Static

RAM Module housed in a standard 36 pin Single-In-

Line package organised as 2M x 8. This offers an

extremely high PCB packing density.

The module is constructed using four 512Kx8

SRAMs in TSOPII packages mounted on a FR4

epoxy substrate. Access times are

85, 100 and

120ns.

The SYS82000RKXD is offered in standard and low

power versions, with the -L module having a low

voltage data retention mode for battery backed

applications.

Plastic 36 Pin Single-In-Line (SIP)

A20

Vcc

WE

D2

D3

D0

A1

A2

A3

A4

GND

D5

A10

A11

A5

A13

A14

A19

CS

A15

A16

A12

A18

A6

D1

GND

A0

A7

A8

A9

D7

D4

D6

A17

Vcc

OE

1

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