Address Inputs

A0 ~ A20

Data Input/Output

D0 ~ D7

Chip Select

CS

Write Enable

WE

Output Enable

OE

No Connect

NC

Power (+5V)

V

CC

Ground

GND

Package Details

Pin Definition

Description

Features

Issue 1.3 : April 2001

SYS82000RKXC - 70/85/10/12

2M x 8 SRAM MODULE

•

Access Times of 85/100/120 ns.

•

Low Power Disapation:

Operating

600 mW (Max.)

Standby-L Version

1.1 mW (Max.)

•

5 Volt Supply ± 10%.

•

Completely Static Operation.

•

•

On-board Decoding & Decoupling Capacitors.

•

38 Pin Single-In-Line package (SIP).

•

Upgrade path to SYS84000RKXC (32Mbits).

The SYS82000RKXC is a plastic 16Mbit Static

RAM Module housed in a standard 38 pin Single In-

Line package organised as 2M x 8 with access

times of 85,100, or 120 ns.

The module is constructed using four 512Kx8

SRAMs in TSOPII packages mounted onto an FR4

epoxy substrate. This offers an extremely high

PCB packing density.

The device is offered in standard and low power

versions, with the -L module having a low voltage

data retention mode for battery backed applications.

Block Diagram

Pin Functions

Plastic 38 pin Single-In-Line (SIP)

NC

A20

Vcc

WE

D2

D3

D0

A1

A2

A3

A4

GND

D5

A10

A11

A5

A13

A14

A19

CS

A15

A16

A12

A18

A6

D1

GND

A0

A7

A8

A9

D7

D4

D6

A17

Vcc

OE

NC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

Pin 38 is A21 on the

SYS84000RKXC upgrade module.

512K x 8

SRAM

A0 - A18

WE

OE

A19

A20

CS

DECODER

CS

512K x 8

SRAM

CS

512K x 8

SRAM

CS

512K x 8

SRAM

CS

D0 - D7