ISSUE 1.7 April 2001

SYS84000RKX - 85/10/12

2

Voltage on any pin relative to V

SS

V

T

(2)

-0.3

-

7.0

V

Power Dissipation

P

T

-

-

2.0

W

Storage Temperature

T

STG

-55

-

125

Notes : (1)

Stresses above those listed may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

DC OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Capacitance (V

Note: Capacitance calculated, not measured.

Parameter

Symbol Test Condition

max

Unit

C

IN1

V

64

pF

C

IN2

V

12

pF

I/O Capacitance

C

I/O

V

12

pF

Recommended Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

V

CC

4.5

5.0

5.5

V

Input High Voltage

V

IH

2.2

-

V

V

Input Low Voltage

V

IL

-0.3

-

0.8

V

Operating Temperature

(Commercial)

T

A

0

-

70

(Industrial)

T

AI

-40

-

85

Parameter

Symbol Test Condition

Min Typ

max

Unit

I/P Leakage Current

Address,OE,WE

I

LI

0V < V

-8

-

8

µA

Output Leakage Current

I

LO

CS = V

-8

-

8

µA

Operating Supply Current

I

CC1

Min. Cycle, CS = V

-

-

140

mA

Standby Supply Current

TTL levels

I

SB1

CS = V

IH

--

24

mA

CMOS levels

I

SB2

CS

--

16

mA

-L Version (CMOS)

I

SB3

CS

-

-

880

uA

Output Voltage

V

OL

I

-

-

0.4

V

V

OH

I

2.4

-

-

V

Typical values are at V

Add 420mA to -L & -P CMOS standby currents to obtain industrial temp range parameters.

DC Electrical Characteristics

(V