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IRLU2908PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLU2908PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 12 page 12/7/04 www.irf.com 1 IRLR2908PbF IRLU2908PbF HEXFET® Power MOSFET Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R θJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.\ The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. S D G VDSS = 80V RDS(on) = 28mΩ ID = 30A D-Pak IRLR2908 AUTOMOTIVE MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax PD - 95552A I-Pak IRLU2908 Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current A EAR Repetitive Avalanche Energy h mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.3 °C/W RθJA Junction-to-Ambient (PCB Mount) jà ––– 40 RθJA Junction-to-Ambient ––– 110 120 0.77 ± 16 180 250 See Fig.12a,12b,15,16 Max. 39 28 150 30 300 (1.6mm from case ) -55 to + 175 2.3 l Lead-Free |
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