KMM374S403CT datasheet(6/11 Pages) SAMSUNG

Part #	KMM374S403CT

Description	PC100 SDRAM MODULE

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 11 page

PC100 SDRAM MODULE

KMM374S403CT

REV. 1 Mar. '98

1. Measured with outputs open.

2. Refresh period is 64ms.

Note :

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, T

A

= 0 to 70

°C)

Parameter

Symbol

Test Condition

CAS

Latency

Version

Unit

Note

-8

-H

-L

Operating Current

(One Bank Active)

ICC1

Burst Length =1

t RC

≥tRC(min)

I OL = 0 mA

1,035

990

mA

1

Precharge Standby Current

in power-down mode

ICC2P

CKE

≤VIL(max), tCC = 15ns

18

mA

ICC2PS

CKE & CLK

≤VIL(max), tCC = ∞

18

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥VIH(min), CS≥VIH(min), tCC = 15ns

Input signals are changed one time during 30ns

270

mA

ICC2NS

CKE

≥VIH(min), CLK ≤VIL(max), tCC = ∞

Input signals are stable

72

Active Standby Current

in power-down mode

ICC3P

CKE

≤VIL(max), tCC = 15ns

36

mA

ICC3PS

CKE & CLK

≤VIL(max), tCC = ∞

18

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥VIH(min), CS≥VIH(min), tCC = 15ns

Input signals are changed one time during 30ns

450

mA

ICC3NS

CKE

≥VIH(min), CLK ≤VIL(max), tCC = ∞

Input signals are stable

270

mA

Operating Current

(Burst Mode)

ICC4

I OL = 0 mA

Page Burst

2Banks Activated

t CCD = 2CLKs

3

1,215

1,110

mA

1

2

990

1,110

990

Refresh Current

ICC5

tRC

≥tRC(min)

990

mA

2

Self Refresh Current

ICC6

CKE

≤0.2V

18

mA

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