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TYPICAL MEMORY STICK INTERFACE EXTENSION

1Y

1Z

1D

1A

1B

5Y

5Z

1R

5D

2Y

2Z

2D

2A

2B

2R

3Y

3Z

3D

3A

3B

3R

4Y

4Z

4D

4A

4B

4R

5A

5B

5R

SCLK

BS

DIR

SD1

SD2

CBT

SCLK

BS

SDIO

Memory

Stick

CBT

SCLK

BS

SDIO

DIR

Memory

Stick

Host

Controller

SN65LVDT41

SN65LVDT14

ABSOLUTE MAXIMUM RATINGS

PACKAGE DISSIPATION RATINGS

SN65LVDT14

SN65LVDT41

SLLS530B – APRIL 2002 – REVISED FEBRUARY 2006

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

SN65LVDT14,

UNIT

SN65LVDT41

-0.5 to 4

V

D or R

-0.5 to 6

V

Input voltage range

A, B, Y, or Z

-0.5 to 4

V

±16

KV

Electrostatic discharge

±8

KV

±500

V

Continuous total power dissipation

See Dissipation Rating Table

Storage temperature range

-65 to 150

°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential I/O bus voltages are with respect to network ground terminal.

(3)

Tested in accordance with JEDEC Standard 22, Test Method A114-A.

(4)

Tested in accordance with JEDEC Standard 22, Test Method C101.

OPERATING FACTOR

PACKAGE

POWER RATING

POWER RATING

PW

774 mW

6.2 mW/°C

402 mW

2

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