HIGH SPEED SILICON SWITCHING DIODES AXIAL LEAD

1N4148, 1N4448

DO-35, 500mW

DESCRIPTION

General purpose ,Industrial, Military and space applications. Hermetically sealed glass with a stud

on either side of the glass passivated chip provides excellent stability. Extremely low leakage &

very high reliability

ABSOLUTE MAXIMUM RATINGS( TA=25 deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse Voltage

VRRM

100

V

Reverse Voltage (Continuous)

VR

75

V

Average Forward Current

IF(AV)

150

mA

Forward Current (DC)

IF

200

mA

Repetitive Peak Forward Current

IFRM

450

mA

Non Repetitive Peak Surge Current tp=1usec

IFSM

2000

mA

tp=1sec

IFSM

500

mA

Power Dissipation

PTA

500

mW

Derating Factor

2.85

mW/deg C

Operating & Storage Junction Temperature

Tj, Tstg

-65 to +200

deg C

Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP MAX

UNIT

Forward Voltage

VF

IF=5mA

1N4448

0.62

-

0.72

V

IF=10mA

1N4148

-

-

1.0

V

IF=100mA

1N4448

-

-

1.0

V

Reverse Current

IR

VR=20V

-

-

25

nA

VR=75V

-

-

5.0

uA

VR=20V, Tj=150 deg C

-

-

50

uA

VR=75V, Tj=150 deg C

-

-

100

uA

Reverse Breakdown Voltage

VBR

IR=100uA

100

-

-

V

IR=5uA

75

-

-

V

DYNAMIC CHARACTERISTICS

Diode Capacitance

Cd

VR=0V, f=1MHz

-

-

4.0

pF

Forward Recovery Voltage

Vfr

IF=50mA, tr=20ns

-

-

2.5

V

Reverse Recovery Time

trr

IF=10mA, to IR=60mA

-

-

4.0

ns

RL=100ohms

Measured @ IR=1mA

Transys

Electronics

LI M ITE D