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QM200DY-2HB Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. QM200DY-2HB
Description  HIGH POWER SWITCHING USE INSULATED TYPE
Download  5 Pages
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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QM200DY-2HB Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25
°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25
°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
Ratings
1000
1000
1000
7
200
200
1560
10
2000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
870
ELECTRICAL CHARACTERISTICS (Tj=25
°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
750
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=1000V, VEB=2V
VCB=1000V, Emitter open
VEB=7V, Collector open
IC=200A, IB=270mA
IC=–200A (diode forward voltage)
IC=200A, VCE=4.0V
VCC=600V, IC=200A IB1=0.4A, –IB2=4.0A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
Max.
4.0
4.0
200
4.0
4.0
1.8
2.5
15
3.0
0.08
0.35
0.04


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