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QM200DY-2H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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QM200DY-2H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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Feb.1999 ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise noted) Unit mA mA mA V V V — µs µs µs °C/W °C/W °C/W Limits Min. — — — — — — 75/100 — — — — — — Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25 °C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M6 Mounting screw M6 Typical value Ratings 1000 1000 1000 7 200 200 1560 10 2000 –40~+150 –40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 870 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=200A, IB=4A –IC=200A (diode forward voltage) IC=200A, VCE=2.8V/5V VCC=600V, IC=200A, IB1=–IB2=4A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. — — — — — — — — — — — — — Max. 4.0 4.0 800 2.5 3.5 1.8 — 3.0 15 3.0 0.08 0.35 0.04 MITSUBISHI TRANSISTOR MODULES QM200DY-2H HIGH POWER SWITCHING USE INSULATED TYPE |
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