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QM200DY-2H Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part No. QM200DY-2H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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QM200DY-2H Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
7
5
4
3
2
7
5
4
3
2
0
400
800
1200
1600
2000
0
10
1
10
2
10
7
5
3
2
7
5
3
2
7
5
3
2
0.40
0.32
0.24
0.16
0.08
0
7
5
3
2
1
10
0
10
0
10
–3
10
–2
10
–1
10
44
4
42
7
5
34
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
44
4
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
–1
10
0
10
1
10
2
10
Tj=25°C
Tj=125°C
VCC=600V
IB1=–IB2=4A
Qrr
Irr
trr
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE


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